REVIEW SEM KLA/eDR - 5210S用途：用于半导体制造中晶圆缺陷的复查，能精准快速地检测出晶圆及光罩层的缺陷，助力解决光罩污染问题，判断缺陷源及纠正相关问题。技术原理：采用第二代浸润式电磁场技术，结合高分辨率成像与拓扑成像，实现自上而下同步。运用设计感知能力，利用标准 IC 设计布局档案信息补充缺陷数据，还结合 KLA - Tencor 检测系统的专有光学图像与现场 SEM 图像，以更好地了解关键制图问题。性能：拥有高分辨率、无与伦比的机台精确度与新型算法，搭配与 TeraFabHT 的独特连通性。具备创新的光罩缺陷检查（RDR）模式，可将光罩坐标无缝转化为晶圆坐标，简化并加快对可能由光罩导致的缺陷部位的检查；能对光罩导致的各种晶圆刻印缺陷类型进行特征描述；可利用 TeraFabHT 提供的光罩定位与缺陷特征描述的专有数据，提升晶圆处理的速度和精确度。2025 年升级后引入掩模版缺陷检查（RDR）和关键点检测（CPI）模式，其 SEM - to - Aerial（S2A）技术可模拟缺陷在晶圆上的印刷效果 。
Product Name: REVIEW SEM KLA/eDR - 5210SPurpose: It is used for the review of wafer defects in semiconductor manufacturing. It can accurately and quickly detect defects in wafers and reticle layers, helping to solve reticle contamination problems, determine the source of defects and correct related issues.Technical Principle: It adopts the second - generation electromagnetic - field immersion technology, combines high - resolution imaging and topological imaging to achieve top - down synchronization. It uses design awareness to supplement defect data with information from standard IC design layout files, and also combines the proprietary optical images of the KLA - Tencor inspection system with on - site SEM images to better understand key mapping problems.Performance: It has high resolution, unparalleled machine accuracy and new algorithms, combined with a unique connectivity with TeraFabHT. It has an innovative Reticle Defect Review (RDR) mode, which can seamlessly convert reticle coordinates into wafer coordinates, simplifying and accelerating the inspection of defect sites that may be caused by the reticle. It can characterize various types of wafer imprint defects caused by the reticle, and can use the proprietary data of reticle positioning and defect characterization provided by TeraFabHT to improve the speed and accuracy of wafer processing. After the 2025 upgrade, it introduced Reticle Defect Review (RDR) and Critical Point Inspection (CPI) modes, and its SEM - to - Aerial (S2A) technology can simulate the printing effect of defects on wafers.