KOKUSAI ELECTRIC DD - 1206V - DF 扩散炉用途：主要应用于半导体制造行业，用于执行扩散和氧化工艺。在芯片生产过程中，通过精确控制炉内环境，让杂质原子扩散进入半导体材料，并在其表面生成高质量氧化层，从而实现对半导体器件电学性能的精准调控 。性能：内部腔室尺寸为 1100mm x 600mm x 800mm 。最高温度可达 1250°C，具备 16 段温度曲线，升温速率可调节。配备外部传感器用于测量顶部和底部温度。设有氩气和氮气入口端口以及压力计。可调节高度的底部托盘能承载 100kg 重量。其炉控制器基于微处理器，有两组 14 位可编程工艺参数，以实现可重复的用户自定义工艺条件，还具备模拟输入和数字输出功能，方便用户监测工艺状况。可选配的吹扫气体控制系统（PGC）能创造可控气氛，与炉控制器协同工作可营造无氧环境，这对扩散应用至关重要。可选的原位气体分析（ISGA）单元可监测炉内气氛质量，配有加热过滤机和质量流量控制器 。

Product Name: KOKUSAI ELECTRIC DD - 1206V - DF Diffusion FurnacePurpose: It is mainly applied in the semiconductor manufacturing industry for diffusion and oxidation processes. During chip production, by precisely controlling the furnace environment, impurity atoms are diffused into semiconductor materials, and a high - quality oxide layer is formed on their surfaces, thus achieving precise control of the electrical properties of semiconductor devices.Performance: The inner chamber size is 1100mm x 600mm x 800mm. The maximum temperature can reach 1250°C, with a 16 - segment temperature profile and an adjustable ramp - up rate. It is equipped with external sensors to measure the top and bottom temperatures. There are inlet ports for both argon and nitrogen as well as pressure gauges. The adjustable - height bottom tray can hold up to 100kg. Its furnace controller is microprocessor - based, with two sets of 14 - bit programmable process parameters to achieve repeatable user - defined process conditions, and also has analog inputs and digital outputs for users to monitor the process conditions. The optional purge gas control (PGC) system can create a controlled atmosphere, and working together with the furnace controller can create an oxygen - free environment, which is crucial for diffusion applications. The optional in - situ gas analysis (ISGA) unit can monitor the quality of the atmosphere inside the furnace, equipped with a heated filtration machine and mass flow controllers.