FORMULA - IS - H 蚀刻 / 灰化设备

用途：专为半导体加工设计，适用于需要快速、精确和精细蚀刻工艺的应用场景，可用于去除光刻胶、蚀刻半导体材料等。

技术原理：采用直接加热方式，配备东京电子独创的脉冲 CO₂激光系统，通过激光能量实现高蚀刻速率，并将晶体损伤降至最低。同时，利用高精度温度控制系统，确保薄膜在基底上均匀沉积，消除热传递不均，保证蚀刻效果一致。此外，还结合了等离子源、蚀刻气体、受控功率和高频（RF）电力，以创建理想的蚀刻轮廓。

性能：退火和蚀刻过程的温度可精确调控，温度范围易于调整。反应腔室高度可调节至最佳蚀刻高度。配备专用的 CO₂激光系统，具有一系列激光参数和功率设置，可根据不同应用优化工艺，实现精确的蚀刻深度和深度轮廓。采用专利 CVD 层生长技术，可一步完成薄层精确形成，减少处理时间，提高产量。

Product Name：FORMULA - IS - H Etcher/Asher Equipment

Purpose：Specifically designed for semiconductor processing, it is suitable for application scenarios that require fast, precise and fine etching processes, and can be used to remove photoresist and etch semiconductor materials.

Technical Principle：It adopts a direct - heating method and is equipped with TEL's original pulsed CO₂ laser system. The laser energy is used to achieve a high etching rate and minimize crystal damage. At the same time, a high - precision temperature control system is used to ensure uniform deposition of thin films on the substrate, eliminate non - uniform heat transfer, and ensure consistent etching results. In addition, it also combines a plasma source, etching gas, controlled power and high - frequency (RF) power to create an ideal etching profile.

Performance：The temperature of the annealing and etching processes can be precisely controlled, and the temperature range is easy to adjust. The height of the reaction chamber can be adjusted to the optimal etching height. It is equipped with a dedicated CO₂ laser system with a series of laser parameters and power settings, which can optimize the process according to different applications to achieve precise etching depth and depth profile. The patented CVD layer growth technology can precisely form thin layers in one step, reducing processing time and increasing throughput.